 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 3629.2 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs [ /Title (RFP3 0N06L E, RF1S3 0N06L ESM) /Subject 30A, 0V, SD ated, .047 hm, ogic evel hanel ower OSETs) /Autho () /Keyords Interil orpoation, SD ated, .047 hm, ogic evel hanThese are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA49027. Features * 30A, 60V * rDS(ON) = 0.047 * 2kV ESD Protected * Temperature Compensating PSPICETM Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER RFP30N06LE RF1S30N06LESM PACKAGE TO-220AB TO-263AB BRAND F30N06LE 1S30N06L G NOTE: When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A. S Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) 6-260 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICETM is a trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP30N06LE, RF1S30N06LESM Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified RFP30N06LE, RF1S30N06LESM 60 60 +10, -8 30 Refer to Peak Current Curve Refer to UIS Curve 96 0.645 2 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg W W/oC kV oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS RJC RJA VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDS = 25V, VGS = 0V, f = 1MHz Figure 12 VDD = 48V, ID = 30A, RL = 1.6 Figures 18, 19 TEST CONDITIONS ID = 250A, VGS = 0V, Figure 11 VGS = VDS, ID = 250A, Figure 10 VDS = Rated BVDSS, VGS = 0 VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 150oC VGS = +10, -8V ID = 30A, VGS = 5V, Figure 9 VDD = 30V, ID = 30A, RL = 1, VGS = 5V, RGS = 2.5, Figures 13, 16, 17 MIN 60 1 TYP 11 88 30 40 51 28 1.8 1350 290 85 MAX 2 25 250 10 0.047 140 100 62 34 2.6 1.55 80 UNITS V V A A A ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). SYMBOL VSD trr ISD = 30A ISD = 30A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns 6-261 RFP30N06LE, RF1S30N06LESM Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID , DRAIN CURRENT (A) 30 0.8 0.6 0.4 0.2 0 0 25 0 25 Unless Otherwise Specified 40 20 10 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 0.5 ZJC , NORMALIZED THERMAL IMPEDANCE 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 t, RECTANGULAR PULSE DURATION (s) 10-1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 100 101 PDM FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 100 ID , DRAIN CURRENT (A) TJ = MAX RATED IDM , PEAK CURRENT CAPABILITY (A) TC = 25oC 500 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - T c I = I 25 ---------------------- 150 100ms VGS = 10V 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 10ms 100ms DC VGS = 5V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 20 10-6 10-5 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) TC = 25oC 1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 100 100 101 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY 6-262 RFP30N06LE, RF1S30N06LESM Typical Performance Curves 100 100 IAS , AVALANCHE CURRENT (A) STARTING TJ = 25oC STARTING TJ = 150oC ID , DRAIN CURRENT (A) 80 TC = 25oC VGS = 10V VGS = 5V VGS = 4.5V 60 VGS = 4V 40 VGS = 3V 20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. 0 0 1.5 4.5 3.0 6.0 VDS , DRAIN TO SOURCE VOLTAGE (V) 7.5 Unless Otherwise Specified (Continued) 10 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 1 0.1 tAV, TIME IN AVALANCHE (ms) 10 NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS IDS(ON) , DRAIN TO SOURCE CURRENT (A) 100 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. 80 -55oC 25oC 175oC 3.0 2.5 2.0 1.5 1.0 0.5 0 -80 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. VGS = 5V, ID = 30A 60 40 20 VDD = 15V 0 0 6.0 1.5 3.0 4.5 VGS , GATE TO SOURCE VOLTAGE (V) 7.5 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A 2.0 ID = 250A 1.5 NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1.0 1.0 0.5 0.5 0 -80 -40 160 120 0 40 80 TJ , JUNCTION TEMPERATURE (oC) 200 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 6-263 RFP30N06LE, RF1S30N06LESM Typical Performance Curves 2000 Unless Otherwise Specified (Continued) VDS , DRAIN TO SOURCE VOLTAGE (V) 60 VDD = BVDSS 45 VDD = BVDSS 3.75 5.0 C, CAPACITANCE (pF) 1500 CISS 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD COSS CRSS 30 2.5 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS RL = 2.0 IG(REF) = 0.62mA VGS = 5V IG(REF) IG(ACT) IG(REF) IG(ACT) 15 1.25 500 0 20 t, TIME (s) 80 0 0 0 10 15 20 5 VDS , DRAIN TO SOURCE VOLTAGE (V) 25 NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) RL VDS VGS VGS + tOFF td(OFF) tr tf 90% VDS 90% 0V RGS DUT 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 6-264 VGS , GATE TO SOURCE VOLTAGE (V) RFP30N06LE, RF1S30N06LESM Test Circuits and Waveforms VDS RL VDD VDS VGS = 10V VGS + (Continued) Qg(TOT) Qg(5) VDD VGS VGS = 1V 0 Qg(TH) IG(REF) 0 VGS = 5V DUT IG(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS 6-265 RFP30N06LE, RF1S30N06LESM PSPICE Electrical Model SUBCKT RFP30N06LE 2 1 3; CA 12 8 1 3.34e-9 CB 15 14 3.44e-9 CIN 6 8 0 1.343e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 75.39 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 7.22e-9 LSOURCE 3 7 6.31e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 11.86e-3 RGATE 9 20 2.52 RIN 6 8 1e9 RSCL1 5 51 RSLVCMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 26.6e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.5 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/89,7)) .MODEL DBDMOD D (IS = 3.80e-13 RS = 1.12e-2 TRS1 = 1.61e-3 TRS2 = 6.08e-6 CJO = 1.05e-9 TT = 3.84e-8) .MODEL DBKMOD D (RS = 1.82e-1 TRS1 = 7.50e-3 TRS2 = -4.0e-5) .MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0) .MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 0.591e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.94 KP = 139.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -3.03e-7) .MODEL RDSMOD RES (TC1 = 5.38e-3 TC2 = 1.64e-5) .MODEL RSLVCMOD RES (TC1 = 1.75e-3 TC2 = 3.90e-6) .MODEL RVTOMOD RES (TC1 = -2.15e-3 TC2 = -5.43e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF = -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.05) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF = 2.8) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.8 VOFF = -2.2) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records 1991. ESG + rev 6/2/93 DPLCAP 10 RSCL2 5 DRAIN 2 LDRAIN RSCL1 + 51 DBREAK 11 EBREAK + 17 18 DBODY 6 8 VTO + 16 5 51 ESCL 50 RDRAIN - GATE 1 EVTO 20 + 18 8 LGATE RGATE 9 DESD1 91 DESD2 6 21 MOS1 MOS2 RIN CIN 8 RSOURCE 7 LSOURCE 3 SOURCE S1A 12 S1B CA EGS 13 8 14 13 S2A 15 S2B 13 + 6 8 EDS CB + 5 8 14 IT RBREAK 17 18 RVTO 19 VBAT + - - 6-266 RFP30N06LE, RF1S30N06LESM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-267 |
Price & Availability of RFP30N06LE
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |